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| HIGH-POWERGaAlAsIRLEDILLUMINATOR .053 .067 OD-666 LED CHIPS .140 R (REF. ONLY) .342 R .325 . 42 1 . 52 1 FEATURES * * * * * * High reliability LPE GaAlAs IRLEDs Ultra high power output 880nm peak emission Six chips connected in series Very wide angle of emission Electrically isolated case EPOXY .084 .096 .030 .426 .432 .955 .965 1.225 1.255 .480 .350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25C PARAMETERS Total Power Output, Po Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF TEST CONDITIONS IF = 300mA IF = 6A IF = 50mA IF = 300mA IR = 10 A VR = 0V MIN 300 TYP 330 5000 880 120 5 30 15 2 2 9 80 MAX UNITS mW nm Deg nm Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 10 Volts Volts pF sec sec ABSOLUTE MAXIMUM RATINGS AT 25C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 6A 4W Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C 260C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature -55C to 100C 60C/W Typical 16C/W Typical 100C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25C Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-POWERGaAlAsIRLEDILLUMINATOR 4,500 4,000 POWER DISSIPATION (mW) 3,500 3,000 2,500 2,000 1,500 1,000 500 0 25 50 75 AMBIENT TEMPERATURE (C) 100 NO HEAT SINK INFINITE HEAT SINK OD-666 t = 10 s t = 50 s t = 100 s THERMAL DERATING CURVE PEAK FORWARD CURRENT, Ip (amps) 10 MAXIMUM PEAK PULSE CURRENT 1 MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 200mA TCASE = 33C RELATIVE POWER OUTPUT (%) 105 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 400mA TCASE = 48C 80 80 60 70 UNITS PRE CONDITIONED AT IF = 110mA, TCASE = 100C, t = 24 HOURS 40 60 20 50 101 102 103 STRESS TIME, (hrs) 104 0 -100 -80 -60 -40 -20 0 20 40 BEAM ANGLE, (deg) 60 80 100 7 6 FORWARD CURRENT, IF (amps) FORWARD I-V CHARACTERISTICS 1.5 1.4 RELATIVE POWER OUTPUT 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 POWER OUTPUT vs TEMPERATURE 5 4 3 2 1 0 8 10 12 14 16 FORWARD VOLTAGE, VF (volts) 18 20 0.5 -50 -25 0 25 50 AMBIENT TEMPERATURE (C) 75 100 100 SPECTRAL OUTPUT 10,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 1000 100 20 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 10 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com |
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